Remarkably High Hole Mobility Metal-Oxide Thin-Film Transistors
نویسندگان
چکیده
منابع مشابه
Remarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitals
High mobility channel thin-film-transistor (TFT) is crucial for both display and future generation integrated circuit. We report a new metal-oxide TFT that has an ultra-thin 4.5 nm SnO2 thickness for both active channel and source-drain regions, very high 147 cm(2)/Vs field-effect mobility, high ION/IOFF of 2.3 × 10(7), small 110 mV/dec sub-threshold slope, and a low VD of 2.5 V for low power o...
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ژورنال
عنوان ژورنال: Scientific Reports
سال: 2018
ISSN: 2045-2322
DOI: 10.1038/s41598-017-17066-x